Semiconductor device including option pads for determining an operating structure thereof, and a system having the same

ABSTRACT

A semiconductor device includes a memory cell array, pad groups, a first option pad, a second option pad and a data input multiplexer block configured to transmit data, input through all or part of the pad groups, to the memory cell array based on whether the first option pad and a ground are connected to each other, wherein the data input multiplexer block is configured to select first pad groups among the pad groups or second pad groups among the pad groups as the part of the pad groups based on whether the second option pad and the ground are connected to each other.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent ApplicationNo. 61/650,140, filed on May 22, 2012, in the U.S. Patent and TrademarkOffice and Korean Patent Application No. 10-2013-0013743, filed Feb. 7,2013, in the Korean Intellectual Property Office, the disclosures ofwhich are incorporated by reference herein in their entireties.

BACKGROUND

1. Technical Field

The present inventive concept relates to a semiconductor device, andmore particularly, to a multichip package which may set each datainput/output pad of each of a plurality of semiconductor chipsdifferently, a method for manufacturing the same, and a system havingthe same.

2. Discussion of the Related Art

A multichip package is an electronic package where multiple integratedcircuits (ICs), semiconductor dies or other discrete components arepackaged onto a unifying substrate. A relatively new development inmultichip package technology is the “chip-stack” package. Here, asubstrate can be designed to allow certain ICs, memories in particular,to be stacked in a vertical configuration making the resultant footprintsmaller. Since area is at a premium in miniature electronics designs,the chip-stack is an attractive option in many applications such asmobile devices.

SUMMARY

An exemplary embodiment of the present inventive concept is directed toa semiconductor device, including a memory cell array, pad groups, afirst option pad, a second option pad, and a data input multiplexerblock configured to transmit data, input through all or part of the padgroups, to the memory cell array based on whether the first option padand a ground are connected to each other. The data input multiplexerblock is configured to select first pad groups among the pad groups orsecond pad groups among the pad groups as the part of the pad groupsbased on whether the second option pad and the ground are connected toeach other.

The semiconductor device further includes data input buffer groups eachconnected to one of the pad groups, and each of the data input buffergroups is configured to be enabled or disabled according to whether thefirst option pad and the ground are connected to each other and whetherthe second option pad and the ground are connected to each other.

The semiconductor device further includes data strobe pad groups, datastrobe input buffer groups each connected to one of the data strobe padgroups, and data input latch groups each connected between one of thedata input buffer groups and the data input multiplexer block. Each ofthe data strobe input buffer groups is configured to be enabled ordisabled according to whether the first option pad and the ground areconnected to each other and whether the second option pad and the groundare connected to each other, and each of the data input latch groups isconfigured to operate based on output signals of the data strobe inputbuffer group to which it is connected.

The semiconductor device further includes a data output multiplexerblock configured to output data from the memory cell array through allor the part of the pad groups based on whether the first option pad andthe ground are connected to each other, and the data output multiplexerblock is configured to select the first pad groups or the second padgroups as the part of the pad groups based on whether the second optionpad and the ground are connected to each other.

The semiconductor device further includes data output buffer groups eachconnected between the data output multiplexer block and one of the padgroups, and each of the data output buffer groups is configured to beenabled or disabled according to whether the first option pad and theground are connected to each other and whether the second option pad andthe ground are connected to each other.

An exemplary embodiment of the present inventive concept is directed toa system, including a semiconductor device and a host configured tocommunicate with the semiconductor device. The semiconductor deviceincludes a memory cell array, pad groups, a first option pad, a secondoption pad, and a data input multiplexer block configured to transmitdata, input from the host, to the memory cell array through all or partof the pad groups based on whether the first option pad and a ground areconnected to each other. Based on whether the second option pad and theground are connected to each other, the data input multiplexer block isconfigured to select first pad groups among the pad groups or second padgroups among the pad groups as the part of the pad groups.

An exemplary embodiment of the present inventive concept is directed toa method for manufacturing a semiconductor device, including connectinga first option pad and a second option pad of a first semiconductor chipto a ground, connecting a first option pad of a second semiconductorchip to the ground and floating a second option pad of the secondsemiconductor chip, and connecting some pad groups of the firstsemiconductor chip with corresponding pads of a package, and connectingsome pad groups of the second semiconductor chip with corresponding padsof the package. The first and second semiconductor chips havesubstantially the same pin-out.

The first semiconductor chip and the second semiconductor chip arestacked.

The connected pad groups of the first semiconductor chip and theconnected pad groups of the second semiconductor chip are not overlappedwith each other.

The pad groups of the first semiconductor chip are connected with thecorresponding pads of the package in a horizontal direction with firstconnectors, and the pad groups of the second semiconductor chip areconnected with the corresponding pads of the package in the horizontaldirection with second connectors.

The semiconductor device may be embodied in a multi-chip package (MCP)or a package on package (PoP).

An exemplary embodiment of the present inventive concept is directed toa portable electronic device, including a semiconductor device and ahost configured to communicate with the semiconductor device.

The semiconductor device includes a first semiconductor chip includingfirst pad groups, a first option pad and a second option pad, whereinthe first and second option pads are connected to a ground, a secondsemiconductor chip which has substantially the same structure as thefirst semiconductor chip and includes second pad groups, a first optionpad connected to the ground, and a second option pad floated, and apackage substrate including package pads. Some of the package pads areconnected to some of the first pad groups, and some of the package padsare connected to some of the second pad groups.

The first pad groups and the second pad groups include data input/outputpads and data strove signal pads.

An exemplary embodiment of the present inventive concept is directed toa semiconductor device including, a memory cell array; a plurality ofinput/output pads; a first option pad; a second option pad; and anoption control circuit configured to generate a selection signal basedon the connectivity of the first and second option pads, wherein all orsome of the input/output pads are used to process data in thesemiconductor device according to the selection signal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a configuration diagram of a semiconductor device according toan exemplary embodiment of the present inventive concept;

FIG. 2 is a block diagram of a first semiconductor chip illustrated inFIG. 1, according to an exemplary embodiment of the present inventiveconcept;

FIG. 3 is a table of an output signal of an option control circuitillustrated in FIG. 2, according to an exemplary embodiment of presentinventive concept;

FIG. 4 is a block diagram of a data input multiplexer block illustratedin FIG. 2, according to an exemplary embodiment of present inventiveconcept;

FIG. 5 is a circuit diagram of a first data input multiplexerillustrated in FIG. 4, according to an exemplary embodiment of presentinventive concept;

FIG. 6 is a block diagram of a data output multiplexer block illustratedin FIG. 2, according to an exemplary embodiment of present inventiveconcept;

FIG. 7 is a circuit diagram of a first data output multiplexerillustrated in FIG. 6, according to an exemplary embodiment of presentinventive concept;

FIG. 8 is a block diagram of a system including the semiconductor deviceillustrated in FIG. 1, according to an exemplary embodiment of presentinventive concept; and

FIG. 9 is a flowchart of a method for manufacturing the semiconductordevice illustrated in FIG. 1, according to an exemplary embodiment ofpresent inventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

FIG. 1 is a configuration diagram of a semiconductor device according toan exemplary embodiment of the present inventive concept.

Referring to FIG. 1, a semiconductor device 10 includes a plurality ofsemiconductor chips 20 and 30. For convenience of explanation, in thepresent exemplary embodiment, a semiconductor device 10 including twosemiconductor chips (or two dies) 20 and 30 is illustrated; however, thepresent inventive concept may be applied to a semiconductor deviceincluding more than three semiconductor chips, e.g., ten semiconductorchips.

As an example, the semiconductor device 10 may be a multi chip package(MCP) including a plurality of semiconductor chips 20 and 30.

A first semiconductor chip 20 includes pads for receiving controlsignals such as a command CMD, an address ADDR, and a clock signal CLKwhich control an operation of the first semiconductor chip 20, datainput/output pads for inputting or outputting data, a first option pad21, and a second option pad 22.

When the semiconductor device 10 is an MCP, each of the pads may beconnected to a connection means of the MCP, e.g., a ball such as asolder ball.

The first semiconductor chip 20 may include a memory cell array forstoring data, and access control circuits for controlling an accessoperation, e.g., a write operation or a read operation, on the memorycell array.

A second semiconductor chip 30 may have substantially the same structureas the first semiconductor chip 20.

For example, when the number of data input/output pads for inputting oroutputting data is N (N is a natural number), N data input/output padsmay be divided into M (M is a natural number) pad groups.

For convenience of explanation in the present exemplary embodiment, itis assumed that N is 32 and M is 4.

Each of the semiconductor chips 20 and 30 may operate in an X32structure or an X16 structure.

Here, the X32 structure may denote that the number of data input/outputpads used to process (e.g., input or output) data in each of thesemiconductor chips 20 and 30 is 32, and the X16 structure may denotethat the number of data input/output pads used to process data in eachthe semiconductor chips 20 and 30 is 16.

In each of the semiconductor chips 20 and 30, a first pad group mayinclude eight data input/output pads and is assigned (or named) a firstbyte Byte0, and a second pad group may include eight data input/outputpads and is assigned a second byte Byte1. In addition, a third pad groupmay include eight data input/output pads and is assigned a third byteByte2, and a fourth pad group may include eight data input/output padsand is assigned a fourth byte Byte3.

According to an exemplary embodiment of the present inventive concept,each pad group may further include DQS pads for transmitting data strobesignals (DQSs).

As illustrated in FIG. 1, third byte pads Byte2 DQ&DQS (hereinafter“Byte2”) of the first semiconductor chip 20, e.g., a top chip, areconnected to third package byte pads PKG Byte2 DQ&DQS (hereinafter “PKGByte2”), and fourth byte pads Byte3 DQ&DQS (hereinafter “Byte3”) of thefirst semiconductor chip 20 are connected to fourth package byte padsPKG Byte3 DQ&DQS (hereinafter “PKG Byte3”).

In addition, first byte pads Byte0 DQ&DQS (hereinafter “Byte0”) of thesecond semiconductor chip 30, e.g., a bottom chip, which is located at abottom of the first semiconductor chip 20, are connected to firstpackage byte pads PKG Byte0 DQ&DQS (hereinafter “PKG Byte0”), and secondbyte pads Byte1 DQ&DQS (hereinafter “Byte1”) of the second semiconductorchip 30 are connected to second package byte pads PKG Byte1 DQ&DQS(hereinafter “PKG Byte1”).

Here, a pad indicated as “DQ&DQS” may include a data input/output padand a DQS pad.

In reference to FIGS. 1 to 7, characters including “BYTE0” may indicatedata input/output through a first byte Byte0, data related to that data,or data pads for transmitting that data. Moreover, characters including“BYTE1,” “BYTE2,” or “BYTE3,” may respectively indicate datainput/output through a second byte Byte1, a third byte Byte2, or afourth byte Byte3, data related to that data, or pads for transmittingthat data.

Each pad PKG Byte0 DQ&DQS, PKG Byte1 DQ&DQS, PKG Byte2 DQ&DQS, PKG Byte3DQ&DQS may be connected to a connection means of the MCP, e.g., a ballsuch as a solder ball. Accordingly, the MCP may communicate with otherelectronic devices through the connection means.

According to whether the first option pad 21 is connected or bonded to aground pad VSS, each of the semiconductor chips 20 and 30 may be used oroperate in the X32 structure or the X16 structure.

For example, when the first option pad 21 of each of the semiconductorchips 20 and 30 is connected to the ground pad VSS, the each of thesemiconductor chips 20 and 30 may be used or operate in the X16structure.

According to whether the second option pad 22 is connected or bonded tothe ground pad VSS, it is determined whether to use the first byte Byte0and the second byte Byte1 together or to use the third byte Byte2 andthe fourth byte Byte3 together among the bytes Byte0 to Byte3 of each ofthe semiconductor chips 20 and 30.

For example, when the second option pad 22 of the first semiconductorchip 20 having the X16 structure is connected to the ground pad VSS, andthe second option pad 22 of the second semiconductor chip 30 having theX16 structure is not connected to the ground pad VSS, the first byteByte0 and the second byte Byte1 of the first semiconductor chip 20 arenot used, and the first byte Byte0 and the second byte Byte1 of thesecond semiconductor chip 30 are used.

Under these conditions, the third byte Byte 2 and the fourth byte Byte3of the first semiconductor chip 20 are used, and the third byte Byte2and the fourth byte Byte3 of the second semiconductor chip 30 are notused.

FIG. 2 is a block diagram of the first semiconductor chip 20 illustratedin FIG. 1, according to an exemplary embodiment of the present inventiveconcept.

A semiconductor chip 20A of FIG. 2 is an exemplary embodiment of thefirst semiconductor chip 20 illustrated in FIG. 1 and includes datainput buffer groups Data Input Buffer1 to Data Input Buffer4, DQS inputbuffer groups DQS Input Buffer1 to DQS Input Buffer 4, an option controlcircuit 100, data input latch groups Data Input Latch1 to Data InputLatch4, a data input multiplexer block 140, a memory cell array 150, adata output multiplexer block 160, data output buffer groups Data OutputBuffer1 to Data Output Buffer4, DQS output buffer groups DQS OutputBuffer1 to DQS Output Buffer4, and input/output pad groupsPAD_BYTE0_DQ<0:7>, PAD_BYTE0_DQS/DQSB, PAD_BYTE2_DQ<0:7>,PAD_BYTE2_DQS/DQSB, PAD_BYTE1_DQ<0:7>, PAD_BYTE1_DQS/DQSB,PAD_BYTE3_DQ<0:7>, and PAD_BYTE3_DQS/DQSB.

The package first byte pads PKG Byte0 DQ&DQS of FIG. 1 may include theinput/output pads PAD_BYTE0_DQ<0:7> and PAD_BYTE0_DQS/DQSB of FIG. 2.

The package second byte pads PKG Byte1 DQ&DQS of FIG. 1 may include theinput/output pads PAD_BYTE1_DQ<0:7> and PAD_BYTE1_DSQ&DSQB of FIG. 2.

The package third byte pads PKG Byte2 DQ&DQS of FIG. 1 may include theinput/output pads PAD_BYTE2_DQ<0:7> and PAD_BYTE2_DQS/DQSB of FIG. 2.

The package fourth byte pads PKG Byte3 DQ&DQS of FIG. 1 may include theinput/output pads PAD_BYTE3_DQ<0:7> and PAD_BYTE3_DSQ&DSQB of FIG. 2.

The option control circuit 100 generates a plurality of enable signalsBYTE0_EN to BYTE3_EN according to whether the first option pad 21 isconnected (e.g., bonded) to the ground pad VSS and whether the secondoption pad 22 is connected (e.g., bonded) to the ground pad VSS.

In response to a first enable signal BYTE0_EN, the data input buffersData Input Buffer1 buffer signals input through the padsPAD_BYTE0_DQ<0:7>. In response to the first enable signal BYTE0_EN, theDQS input buffers DQS Input Buffer1 buffer DQS signals input through thepads PAD_BYTE0_DQS/DQSB.

The data input latches Data Input Latch1 latch output signals of thedata input buffers DATA Input Buffer1 in response to buffered DQSsignals output from the DQS input buffers DQS Input Buffer1.

In response to a third enable signal BYTE2_EN, the data input buffersData Input Buffer2 buffer signals input through the padsPAD_BYTE2_DQ<0:7>.

In response to the third enable signal BYTE2_EN, the DQS input buffersDQS Input Buffer2 buffer DQS signals input through the padsPAD_BYTE2_DQS/DQSB.

The data input latches Data Input Latch2 latch output signals of thedata input buffers Data Input Buffer2 in response to buffered DQSsignals output from the DQS input buffers DQS Input Buffer2.

In response to a second enable signal BYTE1_EN, the data input buffersData Input Buffer3 buffer signals input through the padsPAD_BYTE1_DQ<0:7>. In response to the second enable signal BYTE1_EN, theDQS input buffers DQS Input Buffer3 buffer DQS signals input through thepads PAD_BYTE1_DQS/DQSB.

The data input latches Data Input Latch3 latch output signals of thedata input buffers Data Input Buffer3 in response to buffered DQSsignals output from the DQS input buffers DQS Input Buffer3.

In response to a fourth enable signal BYTE3_EN, the data input buffersData Input Buffer4 buffer signals input through the padsPAD_BYTE3_DQ<0:7>. In response to the fourth enable signal BYTE3_EN, theDQS input buffers DQS Input Buffer4 buffer DQS signals input through thepads PAD_BYTE3_DQS/DQSB. The data input latches Data Input Latch4 latchoutput signals of the data input buffers Data Input Buffer4 in responseto buffered DQS signals output from the DQS input buffers DQS InputBuffer4.

The option control circuit 100 may generate a first selection signalX32_MODE, a second selection signal X16_MODE1, or a third selectionsignal X16_MODE2 according to whether a first option pad X16 Option(e.g., 21 of FIG. 1) and a ground pad VSS are connected and whether asecond option pad BYTE SEL Option (e.g., 22 of FIG. 1) and the groundpad VSS are connected.

The option control circuit 100 may be embodied in a fusing circuit. Forexample, the fusing circuit may include fuses, anti-fuses, or e-fuses.Accordingly, the fusing circuit may generate the first selection signalX32_MODE, the second selection signal X16_MODE1, or the third selectionsignal X16_MODE2 based on whether one, none or more than one of thefuses are cut.

FIG. 3 is a table of an output signal of the option control circuit 100illustrated in FIG. 2, according to an exemplary embodiment of theinventive concept.

Referring to FIG. 3, when the first option pad X16 Option (e.g., 21 ofFIG. 1) of each of the semiconductor chips 20 and 30 is not connected(e.g., No_Bonding in FIG. 3) to the ground pad VSS, the option controlcircuit 100 of each of the semiconductor chips 20 and 30 may output thefirst selection signal X32_MODE to each of the multiplexers block 140and 160 of each of the semiconductor chips 20 and 30 regardless ofwhether the second option pad BYTE SEL Option (e.g., 22 of FIG. 1) isconnected to the ground pad VSS. Accordingly, each of the semiconductordevices 20 and 30 may operate in an X32 structure.

When the first option pad X16 Option of each of the semiconductor chips20 and 30 is connected (e.g., Bonding in FIG. 3) to the ground pad VSS,the second option pad BYTE SEL option of the first semiconductor chip 20is connected to the ground pad VSS and a second option pad of the secondsemiconductor chip 30 is not connected to the ground pad VSS, the optioncontrol circuit 100 of the first semiconductor chip 20 outputs the thirdselection signal X16_MODE2 to each of the multiplexer blocks 140 and160, and an option control circuit of the second semiconductor chip 30outputs the second selection signal X16_MODE1 to each of the multiplexerblocks 140 and 160.

FIG. 4 is a block diagram of the data input multiplexer block 140illustrated in FIG. 2, according to an exemplary embodiment of thepresent inventive concept.

Referring to FIG. 4, the data input multiplexer block 140 includes afirst group of multiplexers 140-1 to 140-8 and a second group ofmultiplexers 141-1 to 141-8.

Each of the multiplexers 140-1 to 140-8 selectively outputs one of eachdata BYTE0_DIN<0> to BYTE0_DIN<7>, output from the input data latch DataInput Latch1, and each data BYTE2_DIN<0> to BYTE2_DIN<7>, output fromthe input data latch Data Input Latch2, in response to a correspondingselection signal X32_MODE, X16_MODE1 or X16_MODE2.

Each output signal CAX16_DIN<0> to CAX16_DIN<7> and CAX16B_DIN<0> toCAX16B_DIN<7>, output from each of the multiplexers 140-1 to 140-8, isoutput to the memory cell array 150.

Each of the multiplexers 141-1 to 141-8 selectively outputs one of eachdata BYTE1_DIN<0> to BYTE1_DIN<7>, output from the input data latch DataInput Latch3, and each data BYTE3_DIN<0> to BYTE3_DIN<7>, output fromthe input data latch Data Input Latch4, in response to a correspondingselection signal X32_MDE, X16_MODE1, or X16_MODE2.

Each output signal CAX16′_DIN<0> to CAX16′_DIN<7> and CAX16B′_DIN<0> toCAX16B′_DIN<7>, output from each of the multiplexers 141-1 to 141-8, isoutput to the memory cell array 150.

The memory cell array 150, as shown in FIG. 2, includes data storageregions CAX16, CAX16B, CAX16′ and CAX16B′.

FIG. 5 is a circuit diagram of the first data input multiplexer 140illustrated in FIG. 4, according to an exemplary embodiment of thepresent inventive concept.

Each of the multiplexers 140-1 to 140-8 and 141-1 to 141-8 illustratedin FIG. 4 may have substantially the same structure as each other.Accordingly, for convenience of explanation, a structure and anoperation of the first data input multiplexer 140-1 is describedreferring to FIGS. 4 and 5.

A transmission gate 510 outputs data BYTE0_DIN<0> output from the datainput latch Data Input Latch1 as output data CAX16_DIN<0> in response tothe first selection signal X32_MODE having a high level.

In addition, a transmission gate 520 outputs data BYTE2_DIN<0>, outputfrom the data input latch Data Input Latch2, as output dataCAX16B_DIN<0> in response to the first selection signal X32_MODE havingthe high level.

When the second selection signal X16_MODE1 has the high level, the firstdata input multiplexer 140-1 outputs the input data BYTE0_DIN<0> as eachof the output data CAX16_DIN<0> and CAX16B_DIN<0> via the transmissiongate 510 and a transmission gate 530.

However, when the third selection signal X16_MODE2 has the high level,the first data input multiplexer 140-1 outputs the input dataBYTE2_DIN<0> as each of the output data CAX16_DIN<0> and CAX16B_DIN<0>via the transmission gate 520 and a transmission gate 540.

FIG. 6 is a block diagram of the data output multiplexer block 160illustrated in FIG. 2, according to an exemplary embodiment of presentinventive concept.

Referring to FIG. 6, the data output multiplexer block 160 includes afirst group of multiplexers 160-1 to 160-8 and a second group ofmultiplexers 161-1 to 161-8.

Each of the multiplexers 160-1 to 160-8 selectively outputs one of eachof data CAX16_DOUT<0> to CAX16_DOUT<7> and each of data CAX16B_DOUT<0>to CAX16B_DOUT<7>, output from the memory cell array 150, in response toa corresponding selection signal X32_MODE, X16_MODE1 or X16_MODE2.

Each output data BYTE0_OUT<0> to BYTE0_OUT<7> and BYTE2_OUT<0> toBYTE2-OUT<7>, output from the multiplexers 160-1 to 160-8, istransmitted to the data output buffers Data Output Buffer1 and DataOutput Buffer2.

Each of the multiplexers 161-1 to 161-8 selectively outputs one of eachof data CAX16′_DOUT<0> to CAX16′_DOUT<7> and each of dataCAX16B′_DOUT<0> to CAX16B′_DOUT<7>, output from the memory cell array150, in response to a corresponding selection signal X32_MODE,X16_MODE1, or X16_MODE2.

Each output data BYTE1_OUT<0> to BYTE1_OUT<7> and BYTE3_OUT<0> toBYTE3_OUT<7>, output from the multiplexers 161-1 to 161-8, istransmitted to the data output buffers Data Output Buffer3 and DataOutput Buffer4.

In response to the first enable signal BYTE0_EN, with reference to FIG.2, the data output buffer Data Output Buffer1 and the DQS output bufferDQS Output Buffer1 are enabled.

In response to the third enable signal BYTE2_EN, with reference to FIG.2, the data output buffer Data Output Buffer2 and the DQS output bufferDQS Output Buffer2 are enabled.

In response to the second enable signal BYTE1_EN, with reference to FIG.2, the data output buffer Data Output Buffer3 and the DQS output bufferDQS Output Buffer3 are enabled.

In response to the fourth enable signal BYTE3_EN, with reference to FIG.2, the data output buffer Data Output Buffer4 and the DQS output bufferDQS Output Buffer4 are enabled.

FIG. 7 is a circuit diagram of the first data output multiplexer 160illustrated in FIG. 6, according to an exemplary embodiment of presentinventive concept.

Each of the multiplexers 160-1 to 160-8 and 161-1 to 161-8 illustratedin FIG. 6 may have substantially the same structure as each other.Accordingly, for convenience of explanation, a structure and anoperation of the first data output multiplexer 160-1 is describedreferring to FIGS. 6 and 7.

When the second selection signal X16_MODE1 has the high level, the firstdata output multiplexer 160-1 transmits the data CAX16_OUT<0>, outputfrom the CAX16 region of the memory cell array 150, and the dataCAX16B_OUT<0>, output from the CAX16B region of the memory cell array150, to the data output buffer Data Output Buffer1 as BYTE0_DOUT<0> viatransmission gates 710 and 720.

When the third selection signal X16_MODE2 has the high level, the firstdata output multiplexer 160-1 transmits the data CAX16_OUT<0>, outputfrom the CAX16 region of the memory cell array 150, and the dataCAX16B_OUT<0>, output from the CAX16B region of the memory cell array150, to the data output buffer Data Output Buffer2 as BYTE2_DOUT<0> viatransmission gates 730 and 740.

In the exemplary embodiments of the present inventive concept explainedby referring to FIGS. 1 to 7, the semiconductor device 10 may set datainput/output pads, embodied in the first semiconductor chip 20 and thesecond semiconductor chip 30, to be different from each other usingbonding or means such as electronic fuses.

Furthermore, as illustrated in FIG. 1, in a process of assembling thesemiconductor device 10 like an MCP, connecting package pads, which areclosest to data input/output pads, with wires may improve productivityof the semiconductor device 10, and also improve features of thesemiconductor device 10, e.g., reduce negative effects of capacitance.

FIG. 8 is a block diagram of a system including the semiconductor device10 illustrated in FIG. 1, according to an exemplary embodiment ofpresent inventive concept.

Referring to FIG. 8, a system 200 may include the semiconductor device10 and a host 210.

The system 200 may be embodied in a personal computer (PC), a server, ora portable electronic device.

The portable electronic device may be embodied in a laptop computer, amobile phone, a smart phone, a tablet PC, a personal digital assistant(PDA), an enterprise digital assistant (EDA), a digital still camera, adigital video camera, a portable multimedia player (PMP), a personalnavigation device or portable navigation device (PND), a handheld gameconsole, or an e-book, for example.

The host 210 may be a central processing unit (CPU), a processor, amulti-core processor, an application processor, or a mobile applicationprocessor, for example.

The semiconductor device 10 and the host 210 may transmit or receivedata DQ to each other using a DQS signal.

The host 210 may supply a command CMD, an address ADDR, and a clocksignal CLK to the semiconductor device 10.

FIG. 9 is a flowchart of a method for manufacturing the semiconductordevice 10 illustrated in FIG. 1, according to an exemplary embodiment ofpresent inventive concept.

Referring to FIGS. 1 and 9, the first option pad 21 and the secondoption pad 22 of the first semiconductor chip 20 are connected to theground VSS (S110).

The first option pad 21 of the second semiconductor chip 30, which hassubstantially the same structure as the first semiconductor chip 20, isconnected to the ground VSS, and the second option pad 22 of the secondsemiconductor chip 30 is floated (S120). The second option pad 22 of thesecond semiconductor chip 30 that is floated is recognized as a voltagehaving a high level by the option control circuit 100.

Byte2 and Byte3 of first bytes (or first pad groups) of the firstsemiconductor chip 20 are connected to PKG Byte2 and PKG Byte3 ofpackage bytes formed on a package substrate, and Byte0 and Byte1 ofsecond bytes (or second pad groups) of the second semiconductor chip 30are connected to PKG Byte0 and PKG Byte1 of the package bytes (S130).

Byte2 and Byte3 of the first bytes are not overlapped with the Byte0 andByte1 of the second bytes.

Byte2 & Byte3 of the first bytes and PKG Byte2 & PKG Byte3 of thepackage bytes are straightly connected to each other in a horizontaldirection through first connection means, e.g., bonding wires, and theByte0 and Byte1 of the second bytes and PKG Byte0 and PKG Byte1 of thepackage bytes are straightly connected to each other in the horizontaldirection through second connection means, e.g., bonding wires.

The semiconductor device 10 including the first semiconductor chip 20and the second semiconductor chip 30 may be embodied in an MCP or apackage on package (PoP).

A semiconductor device according to an exemplary embodiment of thepresent inventive concept may set pads of an upper chip and pads of alower chip, which are included in a package, to be different from eachother, by using wire bonding or an electrical fusing circuit. Therefore,in a process of assembling the package, connecting bonding pads closestto each chip with wires may lead to an improvement in productivity andother features.

While the inventive concept has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the inventive concept as defined by the following claims.

What is claimed is:
 1. A semiconductor device, comprising: a memory cellarray; pad groups; a first option pad and a second option pad; a datainput multiplexer block configured to transmit data, input through allor part of the pad groups, to the memory cell array based on whether thefirst option pad and a ground are connected to each other; data inputbuffer groups each connected to one of the pad groups; data strobe padgroups; data strobe input buffer groups each connected to one of thedata strobe pad groups; and data input latch groups each connectedbetween one of the data input buffer groups and the data inputmultiplexer block, wherein the data input multiplexer block isconfigured to select first pad groups among the pad groups or second padgroups among the pad groups as the part of the pad groups based onwhether the second option pad and the ground are connected to eachother, each of the data input buffer groups is configured to be enabledor disabled according to whether the first option pad and the ground areconnected to each other and whether the second option pad and the groundare connected to each other, each of the data strobe input buffer groupsis configured to be enabled or disabled according to whether the firstoption pad and the ground are connected to each other and whether thesecond option pad and the ground are connected to each other, each ofthe data input latch groups is configured to operate based on outputsignals of the data strobe input buffer group to which it is connected.2. The semiconductor device of claim 1, further comprising a data outputmultiplexer block configured to output data from the memory cell arraythrough all or the part of the pad groups based on whether the firstoption pad and the ground are connected to each other, wherein the dataoutput multiplexer block is configured to select the first pad groups orthe second pad groups as the part of the pad groups based on whether thesecond option pad and the ground are connected to each other.
 3. Thesemiconductor device of claim 2, further comprising data output buffergroups each connected between the data output multiplexer block and oneof the pad groups, wherein each of the data output buffer groups isconfigured to be enabled or disabled according to whether the firstoption pad and the ground are connected to each other and whether thesecond option pad and the ground are connected to each other.
 4. Asystem, comprising: a semiconductor device; and a host configured tocommunicate with the semiconductor device, wherein the semiconductordevice includes: a memory cell array; pad groups; a first option pad anda second option pad; a data input multiplexer block configured totransmit data, input from the host, to the memory cell array through allor part of the pad groups based on whether the first option pad and aground are connected to each other; data input buffer groups eachconnected to one of the pad groups; data strobe pad groups; data strobeinput buffer groups each connected to one of the data strobe pad groups;and data input latch groups each connected between one of the data inputbuffer groups and the data input multiplexer block, wherein the datainput multiplexer block is configured to select first pad groups amongthe pad groups or second pad groups among the pad groups as the part ofthe pad groups based on whether the second option pad and the ground areconnected to each other, each of the data input buffer groups isconfigured to be enabled or disabled based on whether the first optionpad and the ground are connected to each other and whether the secondoption pad and the ground are connected to each other, each of the datastrobe input buffer groups is configured to be enabled or disabledaccording to whether the first option pad and the ground are connectedto each other and whether the second option pad and the ground areconnected to each other, each of the data input latch groups isconfigured to operate based on output signals of the data strobe inputbuffer group to which it is connected.
 5. The system of claim 4, whereinthe semiconductor device further comprises a data output multiplexerblock configured to output data from the memory cell array through theall or the part of the pad groups based on whether the first option padand the ground are connected to each other, wherein the data outputmultiplexer block is configured to select the first pad groups or thesecond pad groups as the part of the pad groups based on whether thesecond option pad and the ground are connected to each other.
 6. Thesystem of claim 5, wherein the semiconductor device further comprisesdata output buffer groups each connected between the data outputmultiplexer block and one of the pad groups, wherein each of the dataoutput buffer groups is configured to be enabled or disabled based onwhether the first option pad and the ground are connected to each otherand whether the second option pad and the ground are connected to eachother.